| PART |
Description |
Maker |
| MBR2X050A120 |
Electrically Isolated Base Plate
|
GeneSiC Semiconductor, ...
|
| IT610 |
(IT6xx) ISOTAB TRIACS ELECTRICALLY ISOLATED
|
Hutson Industries
|
| IXFR24N100 |
HiPerFETTM Power MOSFETs ISOPLUS247TM(Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IXGC16N60B2D1 |
28 A, 600 V, N-CHANNEL IGBT PLASTIC, ISOPLUS220, 3 PIN
Electrically Isolated Back Surface
|
IXYS, Corp.
IXYS Corporation
|
| IXGR32N60C |
HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package(Electrically Isolated Back Side)
|
IXYS Corporation
|
| IRFK2D054 IRFK2D250 IRFK2F054 IRFK2D150 IRFK2D350 |
100V HALF BRDG HEXFET Power MOSFET in a TO-240AA package
ISOLATED BASE POWER HEX PAK ASSEMBLY HALF BRIDGE CONFIGURATION
Isolated Base Power HEX-pak Assembly-Half Bridge Configuration
|
IRF[International Rectifier]
|
| DSEP30-06CR |
HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) 30 A, 600 V, SILICON, RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| X2816AM |
2048 x 8-Bit / Electrically EPROM
ELECTRICALLY ERASABLE PROM
|
Xicor Inc.
|
| IRFK2D450 |
(IRFK2D450 / IRFK2F450) ISOLATED BASE POWER HEX PAK ASSEMBLY HALF BRIDGE CONFIGURATION
|
International Rectifier
|
| IRFK2D250 |
(IRFK2D250 / IRFK2F250) Isolated Base Power HEX-pak Assembly-Half Bridge Configuration
|
International Rectifier
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| IRFK2D450 IRFK2F450 |
500V HALF BRDG HEXFET Power MOSFET in a TO-240AA package
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
ISOLATED BASE POWER HEX PAK ASSEMBLY HALF BRIDGE CONFIGURATION
|
IRF[International Rectifier]
|
